Form factor | M.2 2280 |
Memory size | 1 ТБ |
Type of memory cells | V-NAND TLC |
Interface | PCIe 5.0 x4 |
NVME | Support for NVMe protocol |
Controller | Samsung in-house Controller |
Reading speed | 14700 |
Recording speed | 13300 |
Recording resource (TBW) | 600 |
Time -leaning time for refusal | 1.5 million hours |
Shock resistance | 1500 |
Power consumption | 7.6 ср |
Working temperature | От 0 до 70 |
Additionally |
NVMe 2.0 Cache memory - Samsung 1GB Low Power DDR4X SDRAM TRIM support S.M.A.R.T. support Automatic garbage collection algorithm 256-bit AES encryption (class 0) TCG/Opal IEEE1667 (encrypted disk) Device sleep mode support Random read - 1,850,000 IOPS Random write - 2,600,000 IOPS |
Dimensions | 80.15 x 22.15 x 2.38 |
The weight | 9 |
SSD status | New |
Equipment | SSD drive |
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